By Noël Deferm, Patrick Reynaert
This publication makes a speciality of the advance of circuit and procedure layout concepts for millimeter wave instant communique platforms above 90GHz and fabricated in nanometer scale CMOS applied sciences. The authors display a hands-on technique that was once utilized to layout six varied chips, with the intention to triumph over various layout demanding situations. habit of either actives and passives, and the way to layout them to accomplish excessive functionality is mentioned intimately. This booklet serves as a invaluable reference for millimeter wave designers, operating at either the transistor point and process point.
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Extra resources for CMOS Front Ends for Millimeter Wave Wireless Communication Systems
CN = cgd . Jugo et al. [Jug01] proved that all the closed loop transfer functions defined from a linear system, share the same denominator. To analyze the poles of the closed loop transfer function, a transfer function HDM (s) is introduced which is described as the input admittance of the system (Eq. 26). The analysis of the poles of this transfer function will give an accurate description of the stability behavior of the differential pair. 9 explains how vin , iin , and load and source impedance are defined.
14) will have the desired effect [Var08]. 16b shows the trace of the poles which cause the oscillation when Rbias,CM is swept. CN is kept constant and equal to cgd as this will result in the best stability behavior in differential mode. For a value of Rbias,CM above 6 , the poles shift to the left-half-plane, killing the common mode oscillation. The common mode stability analysis is also carried out by means of the input stability circles (Fig. 17). An increase of Rbias,CM shifts the stability circles more to the edge of the Smith chart and finally results in a unconditionally stable amplifier in common mode when the input stability circle is completely falling outside the Smith chart.
Within the class of single turn transformer topologies, a subdivision can be made based on the vertical implementation of the winding stack. Typically the composition of the CMOS technology metal stack will determine which implementation is most suitable. As an example, a mm-wave integrated transformer, designed in a 45nm lowpower CMOS technology with a standard metal stack is used. The analysis of the topology and dimensions of this transformer is used in the design of two 94 GHz power amplifiers, discussed in Chap.
CMOS Front Ends for Millimeter Wave Wireless Communication Systems by Noël Deferm, Patrick Reynaert