By Khaled Salah, Yehea Ismail, Visit Amazon's Alaa El-Rouby Page, search results, Learn about Author Central, Alaa El-Rouby,
This ebook provides a wide-band and expertise self reliant, SPICE-compatible RLC version for through-silicon vias (TSVs) in 3D built-in circuits. This version money owed for numerous results, together with epidermis impact, depletion capacitance and within reach touch results. Readers will reap the benefits of in-depth insurance of suggestions and know-how equivalent to 3D integration, Macro modeling, dimensional research and compact modeling, in addition to closed shape equations for the via silicon through parasitics. options coated are established by utilizing TSVs in functions resembling a spiral inductor and inductive-based communique procedure and bandpass filtering.
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Extra resources for Arbitrary Modeling of TSVs for 3D Integrated Circuits
Heterogeneous integration of devices 2. Reduced distance of global interconnects 3. Higher integration density 4. Higher form factor 5. Faster access between memory and logic device modules 6. Reduced overall resistance 7. Reduced power 8. Reduced packaging cost 9. Elimination of wire bonds 10. EMI and shielding 11. High bandwidth computer architectures 12. Use only one set of I/O pads to minimize parasitics due to I/O 13. Better reliability 14. Override the saturation of Moore’s law including bonding wires, TSV interconnections (which is a new silicon-based 3D packaging structure), metal bumps, and contactless communication (inductive and capacitive coupling).
D. Meyer, W. G. Katti, Electrical modeling and characterization of through silicon via for three-dimensional ICs. IEEE Transac. Electr. Dev. 57(1) (2010) 27. E. I. Ismail, M. Khellah, T. Karnik, V. 553–556 28. I. Savidis, S. Alam, A. Jain, S. Pozder, R. Jones, R. Chatterjee, Electrical modeling and characterization of through-silicon vias (TSVs) for 3-D integrated circuits. Microelectr. J. 41(1), 9–16 (2010) 29. R. Weerasekera, D. Pamunuwa, M. Grange, H. -R. Zheng, Closed-form equations for through-silicon via (TSV) parasitics in 3-D integrated circuits, in Proceedings of Workshop 3-D Integration, DATE Conference, April 2009 30.
Thus, 2D FPGAs are limited in performance by the complexities of their internal interconnections. 29) . 42 2 3D/TSV-Enabling Technologies 2D FPGA Configuration SRAM Configuration SRAM User Logic Circuit 3D FPGA User Logic Circuit Fig. 29 3D FPGA structure as compared to 2D FPGA DRAM1 Cell Decoder (0,1) DRAM0 Cell Banks (0,1) µp a µp b Fig. 2 3D Memory 3D-stacked memories can be implemented in several architectures. One possible architecture is simply using TSVs to connect dynamic random-access memory (DRAM) layers to the processor layer as depicted in Fig.
Arbitrary Modeling of TSVs for 3D Integrated Circuits by Khaled Salah, Yehea Ismail, Visit Amazon's Alaa El-Rouby Page, search results, Learn about Author Central, Alaa El-Rouby,