Adsorption of Molecules on Metal, Semiconductor and Oxide - download pdf or read online

By K. Christmann, H. J. Freund, J. Kim, B. Koel, H. Kuhlenbeck, M. Morgenstern, C. Panja, G. Pirug, G. Rupprechter, E. Samano, G.A. Somorjai

ISBN-10: 3540254846

ISBN-13: 9783540254843

ISBN-10: 3540258485

ISBN-13: 9783540258483

Surface technological know-how is known as a comparatively younger medical self-discipline, fascinated about the actual and chemical houses of phenomena on fresh and coated sturdy surfaces, studied lower than quite a few stipulations. The adsorption of atoms and molecules on reliable surfaces is, for instance, any such , hooked up with kind of drastic adjustments of all floor homes. An adsorption occasion is often saw in nature and located to be of technical value in lots of commercial methods. consequently, floor technological know-how is interdisciplinary by way of its very nature, and as such an immense middleman among primary and utilized research.

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Additional info for Adsorption of Molecules on Metal, Semiconductor and Oxide Surfaces (Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series / Condensed Matter)

Example text

Landolt-Börnstein New Series III/42A5 Ref. p. 1 Adsorbate properties of hydrogen on solid surfaces 21 We also recall from sect. 1 that there is a number of systems (including the noble metals Cu, Ag, Au, but also other ‘free electron’ metals like Be or Al) which do not spontaneously adsorb and dissociate hydrogen molecules. Accordingly, they exhibit vanishingly small sticking coefficients and practically no H uptake. Nevertheless, the interaction with hydrogen can be studied by simply exposing the respective surfaces to fluxes of H atoms or supersonic H2 molecular beams.

The resulting adsorption energy EΘ usually deviates from Ead,0. In case of attractive interactions EΘ > Ead,0; for repulsive interactions (which are the rule) EΘ < Ead,0. The respective difference depends, of course, on the number of interacting neighbors leading to a (more or less pronounced) coverage dependence of the adsorption energy, E(Θ ). This kind of coverage dependence described above is induced only by the adsorbed particles; the respective effect is called induced (a posteriori) energetic heterogeneity.

Rather, particle scattering effects within the adsorbed H2 layer are essential, leading to an increase of s with coverage, but no systematic studies of the sticking behavior of physisorbed hydrogen have been performed to our knowledge. All in all, spontaneous dissociative hydrogen adsorption is not a very common feature on semiconductor and insulator surfaces, at least not as long as defect-free surfaces are considered. An entirely different situation exists, if H2 molecules are pre-dissociated in the gas phase into reactive H atoms [84But].

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Adsorption of Molecules on Metal, Semiconductor and Oxide Surfaces (Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series / Condensed Matter) by K. Christmann, H. J. Freund, J. Kim, B. Koel, H. Kuhlenbeck, M. Morgenstern, C. Panja, G. Pirug, G. Rupprechter, E. Samano, G.A. Somorjai


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